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Oxide Nanoelectronics: Volume 1292

Author(s):  Harold Hwang,Jeremy Levy,Peter Makysymovych,Gilberto Medeiros-Ribeiro,Rainer Waser
Publisher:  Cambridge University Press
Accession Number:  9172
Class Number:  621.381 HWA/O
About Book:  Symposium K, "Oxide Nanoelectronics," was held Nov. 29-Dec. 3 at the 2010 MRS Fall Meeting in Boston, Massachusetts. The emerging field of oxide nanoelectronics has grown tremendously in the last decade. Many striking empirical observations in a variety of oxide materials show great promise for ultrahigh-density storage, passive and active nanodevice creation, and functionality based on multiple properties (e.g., magnetic and ferroelectric). The prospect for band-device engineering in oxide heterostructures is comparable to what took place for III-V semiconductors roughly 30 years ago. The symposium that this volume is based on brought together researchers working in this new field to lay a materials-based foundation that can pave the way for major industrial use of these high-performance nanoelectronic systems. The presented topics included: the growth of new oxide materials and heterostructures using pulsed-laser deposition and molecular beam epitaxy; integration of oxides with silicon substrates; characterization of novel electronic and correlated-electron properties in oxide thing films and superlattices; nanoscale control of phase transitions and correlated properties; theory of oxide nanostructures; mixed ion-electronic conduction; magnetism; and oxide 2DEGs.
 
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